22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser annealing

We investigated n+SiCP stressors formation by C & P implantation with various amorphization techniques and using high temperature laser annealing SPE technique. Both monomer C and molecular C (C
7
H
7
) with P
4
implant doping was compared as well as with pre-amorphizing implants (PAI) using Ge, Xe or Sb to enhance the Csub level through SPE amorphous layer regrowth. A P dopant activation level of 4E20/cm
³
and a Csub level of 1.52% for Sb-PAI+C
7
+P
4
was realized with s strain layer depth of 50nm using a 1325°C peak laser anneal temperature.