Performance limitations of graphene nanoribbon tunneling FETS due to line edge roughness

A strong deterioration of the performances of GNR TFETs due to LER and the induced source-todrain tunneling leakage is predicted. LER is identified as a crucial design consideration for GNR TFETs that will play an even more important role in ribbons with wqnr <5 nm. An extension of the device gate length beyond lOOnm, in contradiction to the ITRS predictions, would attenuate the effect of LER on the OFF-current level.