RF performance degradation in 100-nm metal gate/high-k dielectric nMOSFET by hot carrier effects

RF performances of 100-nm metal gate/high-k dielectric nMOSFET and parameters degradation by hot carrier injection to apply to RF integrated circuits are investigated. The attained nMOSFETs RF performances are 132-GHz f
T
and 44-GHz f
max
. In addition to RF figures of merit (FOM, f
T
and f
max
), variation of capacitance and resistance is monitored to study hot carrier effects.