Comparative Study on Si and Ge p-Type Nanowire FETs Based on Full-Band Non-Equilibrium Green's Function Simulation

Atomistic hole transport simulation based on a nonequilibrium Green's function method and tight-binding approximation has been performed for Si and Ge p-type nanowire FETs with the diameter ranging from 1.6 nm to 3 nm. Simulation results show that the drain current density increases with increasing the nanowire diameter and the difference in drain current between Ge and Si nanowire FETs becomes smaller with reducing the nanowire diameter.