Human Body Model test of a Low Voltage Threshold SCR device: Simulation and comparison with the Transmission Line Pulse test

A methodology for the application of two-dimensional (2-D) device simulation to HBM events is presented, validated on linear components and applied on the particular case of an ESD protection structure (a 1.2 mum Low Voltage Threshold Silicon Controlled Rectifier LVTSCR). Then we compare HBM and TLP tests. For this example, no correlation between the HBM breakdown level and the second breakdown current density J
_t2
has been found. Nevertheless, we demonstrate some common mechanisms between the two types of tests.