Change of g/sub m/(f) and breakdown voltage induced by thermal annealing of surface states in power MESFETs

The improvement of the dispersion curve of the transconductance frequency, g/sub m/(f), and the decrease in breakdown voltage observed in power MESFETs undergoing accelerated tests is discussed. These changes are thermally activated and are attributed to thermal annealing of surface states. The activation energy, E/sub a/=1.0 eV, can be used to evaluate device reliability.<
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