The influence of tungsten contamination on electrical characteristics of MOS devices in semiconductor processing

The elimination of dedicated process equipment for silicide brings major benefits on equipment investment and pulsation-less production. To achieve the elimination of silicide dedicated process equipments, the influence and criteria of silicide-metal contamination on the electrical characteristics of ULSI MOS devices should be clarified. In this paper, we investigated the influence and criteria of W contamination on the dielectric breakdown reliability and P-N junction leakage current of MOS devices. In addition, feasibility study for common use of equipment such as furnace, wet cleaning, LP-CVD and plasma etcher is discussed.