Control of Si surface characteristics by a new etching solution BHF/H/sub 2/O/sub 2/

We propose a new buffered hydrofluoric acid (BHF) based solution without surfactants, BHF/H/sub 2/O/sub 2/, for Si oxide etching. The BHF/H/sub 2/O/sub 2/ solution is an application of the FPM (hydrofluoric acid-hydrogen peroxide mixture) technique reported by Shimono and Tsuiji (1991). By using BHF/H/sub 2/O/sub 2/, low microroughness and high wettability to Si surfaces are achieved without adding any surfactants.