Field Enhancement for Dielectric Layer of High-Voltage Devices on Silicon on Insulator

Based on the continuity theorem of electric displacement including interface charges, the enhanced dielectric layer field (ENDIF) for silicon-on-insulator (SOI) high-voltage devices is proposed. The following three approaches for enhancing the dielectric layer electric field E
_I
to increase the vertical breakdown voltage of a device V
_B,V
are presented: 1) using a thin silicon layer with a high critical electric field E
_S,C
; 2) introducing a low-permittivity dielectric buried layer; and 3) implementing interface charges between the silicon and the dielectric layer. Considering the threshold energy of silicon epsiv
_T
, the formula of E
_S,C
on silicon layer thickness t
_S
is first obtained, which increases sharply with a decrease of t
_S
, and reaches up to 141 V/mum at t
_S
= 0.1 mum. Expressions for E
_I
and VByV are given, which agree well with simulative and experimental results. Based on the ENDIF, the new device structures are given, and an E
_I
value of 300 V/mum has been experimentally obtained for double-sided trench SOI. Moreover, several conventional SOI devices are explained well by ENDIF.