Development of microelectronics reliability technology in China

Great advances in microelectronics failure physics, process reliability, reliability test and evaluation and failure analysis technologies have been achieved in China recently. Some of the significant achievements include the Hot-Carrier Injection (HCI) degradation model, gate oxide TDDB, Negative Bias Temperature Instability (NBTI) of very deep sub-micro(VDSM) devices, process quality parameter monitoring (PM), statistical process control(SPC) technique, wafer-level-reliability engineering of CMOS process, the equivalent thickness method for evaluating quality and reliability of dielectrics in GaAs monolithic microwave circuits (MMICs), reliability evaluation of metallization interconnect, accurate measurement of anti-latch-up characteristics, total dose X-ray radiation evaluation, accelerated lifetime assessment of GaN/GeSi devices, reliability assurance of Known-Good-Dies (KGDs), failure location and micro-defect analysis of ICs, failure diagnosis and design verification, and the failure analysis expert systems.