Fabrication of 60 nm-pitch ordered InP pillars by EB-lithography and anodization

We obtained 60 nm-pitch ordered InP triangle vertical pillars with high density of around 50% by combining electron-beam (EB) lithography and anodization techniques. Furthermore, adopting the dry-etching transfer onto SiO/sub 2/, we obtained 40 nm-pitch ordered pillars and observed photoluminescence intensity comparable to that from bulk InP substrate that indicates negligible non-radiative recombination.