Temperature dependence of InGaAsP electro-absorption modulator module

We have investigated the temperature and wavelength dependence of the electroabsorption modulator module. Thermal stability of the module was very high. Controllability of the driving voltage has been demonstrated by changing the module temperature. The optimum Eg at 20/spl deg/C has been estimated to be 48-55 meV, in consideration of small insertion loss and low driving voltage.