Strain effects in InAsP/InP MQW modulators for 1.06 /spl mu/m operation

In summary we have studied the electroabsorption response of InAsP-InP MQW p-i-n structures grown for the first time by SS-MBE. Some partial relaxation has taken place due to the cumulative effects of strain in successive QWs. Despite this the electrical properties of the devices were not degraded and demonstrated leakage currents of less than InA for up to 16 V reverse bias.