A technology for monolithic integration of high-indium-fraction resonant-tunneling diodes with commercial MESFET VLSI electronics

A novel epitaxy-on-electronics (EoE) technology, developed at MIT, allows the integration of III-V heterostructures and commercial VLSI GaAs circuits. We have designed a monolithic resonant-tunneling diode (RTD) based static random access memory which uses this technique. We review both the EoE process and the design and epitaxial growth techniques for high performance In/sub x/Ga/sub 1-x/As/AlAs RTDs suitable for memories.