Fabrication of a polarization insensitive electroabsorption modulator with strained InGaAs/InAlAs MQW by MOVPE

Strained InGaAs/InAlAs multi-quantum well (MQW) layers are grown by a low pressure MOVPE. Introduction of compressive strain into an InAlAs barrier layer against a tensile strained well layer makes it possible to grow an MQW layer with good quality. By using these layers, we have also demonstrated strained InGaAs/InAlAs MQW electroabsorption modulators with a polarization insensitivity.