Multicomponent zone melting growth of ternary InGaAs bulk crystal

A 13 mm thick In/sub x/Ga/sub 1-x/As crystal with n=0.14 has been successfully grown by a method of multicomponent zone melting growth. The alloy composition gradually changes along the growth direction, and this change is well explained by a temperature profile. A good uniformity in the alloy composition along the direction normal to the growth was also achieved.