Single event burnout as the failure mode for a low voltage MOSFET driver

A MOSFET driver exhibits a destructive single-event effect, after which testing done on the device excludes single-event latch-up as the mechanism but suggests single-event burnout (SEB). SEB is normally not seen in device with such low voltages. The design that optimizes high current density and a fast slew of the part may contribute to the sensitivity of the device to SEB.