Formation of USJ with cluster implants for 32nm node and beyond

Cluster Ion implantation is an attractive alternative approach to realize applications in semiconductor devices at 32 nm node and beyond. Cluster ions have a special property of making self-amorphous layer even at a lower dose. Here we will discuss the self-amorphizing properties of heavier cluster ion species like B
₃₆
, B
₁₈
and C
₁₆
and discuss how these could be substituted for various implants in devices like low energy SDE, PAI and co-implant applications. For applications with ultra-low energy requirements below 500 eV, B
₃₆
species can provide both process and throughput advantage without any device related issues due to energy contamination.