Multi-level phase change memory using slow-quench operation: GST vs. GSST

In this paper, we demonstrate the use of a slow-quench waveform for multi-level phase change memory operation and compare the use of Ge
21
Sn
10
Sb
15
Te
54
(GSST) and Ge
2
Sb
2
Te
5
(GST). A faster multilevel operation is possible with the use of GSST, owing to its faster crystallization speed