Effects of bandgap narrowing on the capacitance of silicon and GaAs pn junctions

The effect of heavy doping on the capacitance-voltage relation of abrupt and linearly-graded p-n junctions is studied by computer simulations. An estimate of bandgap narrowing in compensated silicon is given for linearly-graded junctions. Capacitance-voltage curves of abrupt p-n GaAs junctions grown by MBE are investigated and compared to the theoretical curves.<
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