SiC vs. Si: two-dimensional analysis of quasi-saturation behavior of DMOS devices operating at elevated temperatures

This paper reports a 2D analysis of the quasi-saturation behavior of 6H-SiC DMOS devices considering surface trapping effect. Based on the study, in the pre-quasi-saturation region, the drain current is predominantly determined by the surface trapping effect. In the quasi-saturation region, the drain current is mainly influenced by the electron mobility in the substrate region.