Impact of the gradient of the non-equilibrium point defect concentration on the dopant flux in silicon

A closed form relationship for the dopant flux in silicon in the presence of a nonequilibrium point defect concentration and its gradient is derived solving a boundary value problem. Based on the derived relationship the calculations are performed using experimental dopant profiles, obtained by implanting B and P in silicon at high temperatures. These calculations show that the omission of the flux component attributed to the non-equilibrium point defect concentration gradient can result in an overestimation of the point defect density more than one order.