Modelling and performance of vertical trench MOSFET in power electronics

In this paper, a family of SPICE models is proposed for the recently developed trench power MOSFET. Our modeling and parameter extraction approach is based on an analytical study, on two-dimensional device simulations and on experimental characterisation. Then, it is shown that regarding the total power losses, the trench MOSFET could be a device of choice, compared with classical high cell density vertical DMOSFET.