A comprehensive model for high pressure growth of InP crystals

We have developed a comprehensive model that accounts for oscillatory, laminar and turbulent flows caused by buoyancy and surface tension forces; forced convection due to crucible and crystal rotations; and complex thermal boundary conditions. The model also accounts for magnetohydrodynamics and sophisticated radiation heat exchange. Thermal elastic stress in the InP crystal is simultaneously calculated using the temperature distribution and crystal/melt interface shape obtained from the thermal transport simulation. A sophisticated adaptive grid generation technique together with the curvilinear finite volume discretization and several other high resolution numerical schemes have made it possible to simulate the growth of a compound crystal in a high pressure system.