A novel vertical bottom-gate polysilicon thin film transistor with self-aligned offset

A novel device structure for the vertical bottom polysilicon gate thin film transistor (TFT) with a self-align offset drain is proposed and demonstrated. The new VTFT allows a deep-submicron channel length, which is determined by the thickness of the active polysilicon film, not by the lithographic system resolution. The self-alignment offset drain reduces the leakage current, as a result, it exhibits good device performance.