High-Power Tunnel-Injection 1060-nm InGaAs–(Al)GaAs Quantum-Dot Lasers

High-power 1060-nm InGaAs-(Al)GaAs quantum-dot (QD) laser material was developed with an integrated InGaAs quantum film acting as a tunnel injector for electrons. In comparison to a QD laser without tunnel-injection design, the new type of lasers exhibit a strongly improved temperature stability of the threshold current and internal quantum efficiency.