8000 V 1000 A gate turn-off thyristor with low on-state voltage and low switching loss

An 8000 V, 1000 A gate turn-off thyristor (GTO) has been developed. Low on-state voltage and low switching loss are realized with a combination of a p-i-n structure and a novel ringed-anode short structure. The p-i-n structure is fabricated by using both a diffusion technique and an epitaxial growth technique. The device's structure, the p-i-n base process, and the electrical characteristics of the GTO are discussed.<
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