Fabrication and Properties of $\hbox{Pt}/\hbox{Bi}_{3.15}\hbox{Nd}_{0.85} \hbox{Ti}_{3}\hbox{O}_{12}/\break\hbox{HfO}_{2}/\hbox{Si}$ Structure for Ferroelectric DRAM (FEDRAM) FET

Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 400-nm-thick Bi
_3.15
Nd
_0.85
Ti
₃
O
₁₂
(BNdT) ferroelectric film and 4-nm-thick hafnium oxide (HfO
₂
) layer on silicon substrate have been fabricated and characterized. It is demonstrated that the Pt/Bi
_3.15
Nd
_0.85
Ti
₃
O
₁₂
/ HfO
₂
/Si structure exhibits a large memory window of around 1.12 V at an operation voltage of 3.5 V. Moreover, the MFIS memory structure suffers only 10% degradation in the memory window after 10
¹⁰
switching cycles. The retention time is 100 s, which is enough for ferroelectric DRAM field-effect-transistor application. The excellent performance is attributed to the formation of well-crystallized BNdT perovskite thin film on top of the HfO
₂
buffer layer, which serves as a good seed layer for BNdT crystallization, making the proposed Pt/Bi
_3.15
Nd
_0.85
Ti
₃
O
₁₂
/ HfO
₂
/Si suitable for high-performance ferroelectric memories.