$\hbox{HfO}_{2}$–III-Nitride RF Switch With Capacitively Coupled Contacts

We report on the first metal-oxide-semiconductor AlGaN/GaN radio-frequency (RF) switch with capacitively coupled contacts using a HfO
₂
layer as the gate dielectric and surface passivation layer. The new insulating-gate RF switch has a lower leakage current and can handle higher RF powers than AlGaN/GaN HFET switches.