High Performance Long-and Short-Channel In0.7Ga0.3As-channel MOSFETs

In conclusion, we have demonstrated long and short-channel In
_0.7
Ga
_0.3
As MOSFETs with and without alpha-Si passivation. Devices with alpha-Si show much higher transonductance and effective peak mobility of 3810 cm
²
/Vs. These results indicates that the alpha-Si layer has successfully passivated the III-V surface. Short-channel MOSFETs with gate length of 160 nm display record current of 825 mA/mm and peak transconductance of 683 mS/mm. These results are promising for realizing InGaAs-channel MOSFETs suitable for VLSI applications.