In-N co-doped P-type ZnO films electrical prepared by modified ion beam enhanced deposition

In-N co-doped P-type ZnO films were prepared on SiO
₂
and glass substrates by IBED method. The structural, optical and electrical properties were characterized by XRD, XPS, AFM and Hall test. The tests results show that the film was polycrystalline with a preferred (002) orientation. The resistivity, mobility and carrier concentration was 1.6times10
^-3
Omegamiddotcm, 35.9 cm
²
/VmiddotS and 1.66times10
²⁰
/cm
³
after annealing at 600degC for 30 min, respectively.