35 nm metamorphic HEMT MMIC technology

A metamorphic high electron mobility transistor (mHEMT) technology featuring 35 nm gate length has been developed. The optimized MBE grown layer sequence has a channel mobility and a channel electron density as high as 9800 cm
²
/Vs and 6.1times1012 cm
^-2
, respectively. To enable a maximum extrinsic transconductance g
<sub>m,

max</sub>
of 2500 mS/mm the source resistance has been reduced to 0.1 Omegamiddotmm. An f
_t
of 515 GHz was achieved for a 2 times 10 mum device. Based on this advanced 35 nm mHEMT technology very compact single-stage H-band amplifiers circuits have been realized demonstrating a high small-signal gain of more than 7 dB at 270 GHz.