Unsymmetrical gate voltage drive for high power 1200V IGBT4 modules based on coreless transformer technology driver

The performance of the new IGBT
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chip technology in PrimePACKtrade high power module housing is presented here together with the coreless transformer technology driver IC for the first time in this paper. These modules usually are driven using symmetrical gate drive voltage of +/-15 V. The driver presented here uses unsymmetrical gate drive voltage of -7V and +15V. This alternate approach results in different dynamic module behaviour compared to classical. Thus, this paper discusses differences in both concepts and brings a solution which allows to use the unsymmetrical concept as well as symmetrical.