Measurement of temperature sensitive parameter characteristics of semiconductor silicon and silicon -carbide power devices

In this paper, results of laboratory investigation of representative samples of semiconductor silicon and silicon carbide power devices, such as PiN diode, Shottky diode, IGBT and JFET, are presented. With use of a thermal chamber the characteristics of temperature sensitive parameters for selected types of devices were determined by measurements within the range 25 - 150degC. The measurement was done using short pulses, which are not able to change measured temperatures. The results have to enable identification of junction temperature in the case of other tests, especially those oriented on energy losses, efficiency, and thermal management.