An analysis on turn-off behaviour of 1.2kV NPT-CIGBT under clamped inductive load switching

For the first time, this paper analyses the turn-off-behaviour of the planar 1.2kV/25A NPT-CIGBT under clamped inductive load switching in detail through experiment and simulation. Turn-off behaviour of the CIGBT involves strong interaction between device and circuit parameters. The circuit parameter such as gate resistance was varied, in order to observe the di/dt, dv/dt and turn-off energy loss of the device. Experimental results are shown at 25°C and 125°C. In addition, numerical simulation results are used to enhance understanding of the internal physics of the NPT-CIGBT turn-off process.