Improving Q-factor of Monolithic Inductor by Using Double Ground Shield - N+ Buried and Polysilicon – a Realistic Simulation

This work presents a new alternative to improve integrated inductor performance, incorporating double ground shield using polysilicon and n+ buried layer, providing a fully shield and preventing the electric field penetration. This technique was compared with conventional inductors and improves Q-factor up to 50% at 3.5, 4 and 5 GHz. The results were obtained based on AMS 0.35μm BiCMOS technology. This method can be applied to any BiCMOS technology.