Fabrication of p-n junctions of Bi-Sb-Te thermoelectric materials

The aim of the investigation is to attempt to build-up a p-n junction by means of utilizing conventional thermoelectric materials, i.e. bulk polycrystalline p-type Bi
_0.45
Sb
_1.55
Te
₃
and n-type Bi
_1.6
Sb
_0.4
Te
₃
. The fabrication used a rapid and ordinary sintering procedure. The current-voltage (I-V) characteristic curves are measured for several heating times and temperatures. The results show the feasibility of obtaining a diode-like behavior with a low leakage current at ambient temperature.