Evaluation of Ultra Thin Body Si-On-ONO (UTB SOONO) transistors using ultra thin spacer technology

Ultra Thin Body Si-On-ONO (UTB SOONO) transistors with ultra thin spacer are successfully demonstrated and evaluated. They have shown increased driving current more than 30 % compared with conventional UTB SOONO transistors with thick spacer due to reduced source/drain resistance without short channel effect degradation by using thin spacer. In this paper, it is shown that thin spacer technology is very attractive to UTB SOI device in terms of device performance and process simplicity.