Silicon quantum dot devices

Quantum dot structures, where electrons are confined three-dimensionally in the below 10 nm scale, show characteristics quite different from conventional bulk structures. Recent progress in the fabrication technology of silicon nanostructures has made possible observations of novel electrical and optical properties of silicon quantum dots, such as single electron tunneling, ballistic transport, visible photoluminescence and electron emission. Electron transport and photonic properties of silicon nanocrystals prepared by plasma processes are described with particular emphasis on fabrication of monodispersed silicon nanocrystals, high-density assembly of silicon quantum dost, silicon nanodot memory, NEMS devices, and silicon photonic devices.