Charge Collection Efficiency Measurements for Segmented Silicon Detectors Irradiatedto $1\times 10^{16}\ {\hbox {n}}\ {\hbox {cm}}^{-2}$

Plans are well advanced for a phased upgrade program of the Large Hadron Collider (LHC) at CERN. An improvement of nearly a factor of ten to reach a luminosity close to 10
³⁵
cm
²
s
^-1
is the target of the upgraded machine, called the Super LHC (SLHC). The innermost tracker devices in the SLHC will be exposed to hadron radiation doses in excess of 1 times 10
¹⁶
n
_eq
cm
^-2
. The detectors to be used in the tracker system of the SLHC experiments need therefore to be qualified to these extreme fluences. Segmented n-strip silicon detectors made with thin (140 mum) and standard (300 mum) p-type substrates have been irradiated with neutrons to different fluences up to 1 times 10
¹⁶
n
_eq
cm
^-2
and characterised in term of charge collection efficiency measurements using high speed (40 MHZ, 25 ns shaping time) analogue electronics. These measurements are the first direct comparison between the charge collection performance of thin and thick silicon microstrip devices as a function of different fluences relevant to future supercolliders. They also set a reference for the maximum collected charge by segmented sensors made in planar technologies (microstrip and pixel detectors) at these extreme doses, allowing for predictions on the functionality of silicon detectors that can operated in the inner tracking system of SLHC experiments.