A 0.1- mu A standby current, ground-bounce-immune 1-Mbit CMOS SRAM

A 1-Mb CMOS static RAM (SRAM) that has very high immunity against ground bounce has been developed. The novel circuit techniques of the multiple clock generator configuration and the optimization of the transient response characteristics of the clock generators have been developed for the ground-bounce immunity. A thin-film transistor has been used as a memory cell load device instead of the conventional polysilicon resistor. The access time of the SRAM is 35 ns and the standby current is 0.1 mu A. The memory cell size is 41.08 mu m/sup 2/.<
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