CW Lasing at 1.35 $\mu$m From Ten InAs–Sb : GaAs Quantum-Dot Layers Grown by Metal–Organic Chemical Vapor Deposition

We report the fabrication of GaAs-based quantum-dot (QD) lasers grown by metal-organic chemical vapor deposition (MOCVD) above 1.3 m. We fabricated a laser diode with ten stacked InAs-Sb:GaAs(100) QD layers, grown by antimony-surfactant-mediated growth. Ground-state lasing was obtained under continuous-wave operation at room temperature at 1.35 mum, with a maximum ground state modal gain of 19.3 cm
^-1
. These values are the highest values reported for MOCVD-grown GaAs-based QD laser.