Free Charge Carriers Trapping Properties in Neutron-Irradiated DOFZ Silicon Pad Detectors

Silicon pad-detectors fabricated from diffused oxygenated silicon were irradiated with reactor neutrons with fluences between 1 times 10
¹⁴
n
_eq
/cm
²
and 1 times 10
¹⁵
n
_eq
/cm
²
. The transient current technique was used to measure the trapping probability for holes and electrons. The results obtained support the model of a linear increase with fluence. Also the temperature dependence of the trapping time constant for electrons is investigated. This temperature dependence was found independent on the irradiated fluence.