Effect of Back-Etching on Electrical Properties of PZT thin films

(lll)-oriented PZT(30/70) (PZT30) thin films were deposited on Pt/Ti/SiO
₂
/Si substrate by Chemical Solution Deposition (CSD). The part of the Si substrates of 500 μm thickness were etched from back side by a wet chemical etching process. The depth of the back-etching was controlled by changing the etching time (residual Si; 25-180 μm). Dielectric and ferroelectric properties for the PZT30 thin films were measured at the back-etched and the un-etched part to clarify the effect of the residual stress on the electrical properties.