DC theoretical sensitivity of the silicon heterostructure switch to parameter fluctuations

Theory has been previously presented for the silicon heterostructure switch (see R.J. Green et al., ibid., vol.35, no.7, p.1035-44, 1988). However, a theoretical analysis of the sensitivity of the device to parameter fluctuations was not undertaken. In the present work, the extent to which the performance of the device is affected by fundamental parameter values is considered when under DC excitation.<
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