10 W/mm and High PAE Field-plated AlGaN/GaN HEMTs at Ka-band with n+GaN Source Contact Ledge

The paper reports small-signal and large-signal performance of 140 nm gatelength field-plated AlGaN/GaN HEMTs at Ka-band frequencies, in which the AlGaN/GaN HEMTs were fabricated with n+ GaN source ledge to reduce source access resistance such that the gate-to-drain feedback capacitance and breakdown voltage is not impacted.