Edge Effects on Gate Tunneling Current in HEMTs

We elucidate five considerations for accurate estimation of electron tunneling from the gate edges of high-electron mobility transistors (HEMTs). These considerations are listed as follows: 1) edge roughness; 2) net charge at the AlGaN/passivation interface; 3) dielectric constant of the medium above the HEMT surface; 4) nontriangular potential barrier; and 5) negligible angular tunneling from the gate edge. Using these considerations, we calculate the reverse gate current I
_G
of AlGaN/GaN HEMTs based on thermionic trap-assisted tunneling (TTT) and direct tunneling (DT) mechanisms. These calculations establish that the observed rise in I
_G
for a gate voltage beyond the threshold is due to tunneling from the gate edges. The calculations also show that the TTT mechanism can predict the measured I
_G
of AlGaN/GaN HEMTs over a wide range of gate voltages and temperatures and point to the possibility of a rapid rise in I
_G
at high gate voltages due to the DT mechanism.