Modeling the stress-induced leakage current origin from antisite defects in MOSFETs

First-principles electronic structure simulations shows that the formation energy of the antisite defects in SiO2 is less than that of oxygen vacancy. On the basis of the analysis of the electronic structure, the defect assisted tunneling was calculated and it results show that such defects could be an origin of the stress-induced leakage current in MOSFETs.