Anisotropy and Non-Uniformity Effects on the Strain Relaxation in GaInAsP/InP Quantum Wire Structures

Calculation of the strain relaxation in membrane GaInAsP/InP quantum wire laser is performed using finite element method. Effect of strain-compensating barriers in multiple quantum wire stacks on the strain relaxation is investigated using both isotropic and anisotropic models. It is found that the difference between the two results increases when the wires are narrower and this effect is more pronounced in the barrier regions