Threshold Voltage Shift Due to Mechanical Stress-Enhanced Plasma Process-Induced Damage in 0.13-$\mu\hbox{m}$ pMOSFET

Mechanical stress-enhanced plasma process-induced damage (PPID) in 0.13-mum pMOSFET was investigated. The PPID, which was initially charged neutral, became positively charged during hydrogen annealing, thus, changing the PMOS threshold voltage (V
_th
). Different device structures were designed to evaluate the mechanical stress effects on PPID. The features of these positive charges, including the PPID induced V
_th
shift, and its channel length dependence were also investigated